Semiconductor lasers emit at wavelengths from 375 nanometers to 1.8 microns (1,800 nanometers), but then skip to wavelengths of about 4 microns. In that gap, current semiconductors appear to be incapable of lasing. Now researchers at Binghamton University in New York claim to have devised a strategy to bridge the lasing gap with new materials and architectures that could enable applications not now possible.
Text: http://www.eetimes.com/showArticle.jhtml?articleID=206901275
