MIIM devices have four layers, (left to right) amorphous zirconium, hafnium oxide, aluminum oxide and aluminum, shown here in a transmission electron microscope (TEM) image.
(Source: Oregon State University)
Tuesday, September 10, 2013
#MATERIALS: "Quantum MIIM Diodes Beat Silicon"
Operating at terahertz frequencies is much higher than silicon devices can achieve today, but metal-insulator-metal (MIM) diodes can achieve teraherz frequencies while consuming less power and producing less heat. Unfortnatley, those promising technologies always seem just out of reach. Now Oregon State University (OSU) researchers claim to have invigorated the technology by adding a second insulator layer to produce an MIIM device that aims to solve the problems with MIM devices and come closer to taking the technology mainstream: R. Colin Johnsn @NextGenLog
MIIM devices have four layers, (left to right) amorphous zirconium, hafnium oxide, aluminum oxide and aluminum, shown here in a transmission electron microscope (TEM) image.
(Source: Oregon State University)Further Reading
MIIM devices have four layers, (left to right) amorphous zirconium, hafnium oxide, aluminum oxide and aluminum, shown here in a transmission electron microscope (TEM) image.
(Source: Oregon State University)
