NANOTUBES: IBM says experimental carbon-based transistor beats silicon
The next generation of semiconductors will be carbon-based if researchers at IBM's T.J. Watson Research Center here have their way. IBM revealed details Monday (May 20) about what it is calling "the world's best transistor," based on a single carbon nanotube measuring 1.4-nanometers in diameter. Fabricated with conventional MOSFET processing technology, IBM characterized both n-type and p-type FETs using carbon nanotubes as the channel.

Audio interviews: http://ampcast.com/RColinJohnson

Interview CDs: http://mp3.com/RColinJohnson

Story in EE Times: http://www.eetimes.com/story/OEG20020520S0020