"CHIPS: IBM teams with TDK on MRAM"

IBM Corp. is launching a joint research and development project with TDK Corp. to create high-density magnetic random access memories (MRAMs) in four years. The new multiyear program will aim for a 20-fold increase in the memory density of MRAMs by switching to a writing mechanism, called spin-momentum transfer, that draws less power and uses smaller bit cells. The only commercially available MRAMs today, such as those from Freescale, are based on the old magnetic-field data-writing, but the new method being explored by IBM and TDK uses less power and smaller bit cells. Reading is still accomplished by sensing a change in resistance.
Text: http://www.eetimes.com/showArticle.jhtml?articleID=201801174