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Thursday, March 06, 2008

"MATERIALS: IBM claims noise reduction for graphene FETs"


Reducing noise in advanced graphene transistors by 10 times can be achieved with a novel by-layer architecture, according to researchers at the T. J. Watson Research Center at IBM Corp. (Yorktown Heights, N.Y.). As transistor dimensions are reduced below 32 nanometers, noise becomes a big problem for all devices in any material--a problem that follows Hooge's rule. But if ways can be found to sidestep Hooge's rule and reduce that noise, then the higher speeds of smaller devices can be combined with increases in signal-to-noise ratio. IBM now claims to have found the solution for graphene transistors.
Text: http://www.eetimes.com/showArticle.jhtml?articleID=206902149