IBM Research is claiming the world's fastest graphene field-effect transistor (FET), operating at 26 GHz. Researchers at IBM's Thomas J. Watson Research Center (Yorktown Heights, N.Y.) predicted that the higher electron mobility of carbon will eventually propel the material beyond the reach of silicon into the terahertz range greater than 100 GHz.
BOTTOM LINE: Silicon-based electronics runs out of steam when clock frequencies are raised much above 10GHz, however new materials like graphene and carbon nanotubes will extend the reach of electronics into the THz range.
Text: http://www.eetimes.com/showArticle.jhtml?articleID=212501276
Audio: http://homepage.mac.com/guitarmedia/interviews/rcjGraphene-08-12-19.mp3
