Intel and others have been experimenting with integrating III-V semiconductors into the silicon design flow for years, but now MIT claims to have a process that could best silicon altogether: R. Colin Johnson @NextGenLog
Cross-section transmission electron micrograph of the fabricated transistor shows the V-shaped inverted gate (center) with the indium gallium arsenide channel (light color) under the molybdenum source and drain contacts on either side.
Here is what EETimes says about MIT's III-V work: Integrating III-V transistors into the 22-nm design flow is possible today, according to the Massachusetts Institute of Technology (MIT) which demonstrated indium-gallium arsenide (InGaAs) transistors recently at International Electron Devices Meeting (IEDM, San Francisco)...
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