"MRAMs: Nanoscale metal deposition eyed for magnetic tunnel junctions"
A new technique for fabricating magnetic tunnel junctions would enable magnetoresistive random-access memories (MRAMs) to be economically manufactured, according to researchers here at the Pacific Northwest National Laboratory. Acting on theoretical evidence uncovered by Sandia National Laboratory solid-state theorist Dwight Jennison, PNNL chief scientist Scott Chambers formed atomically flat crystalline films of metal measuring only a few atoms thick on sapphire (aluminum oxide).
Audio interviews: http://ampcast.com/RColinJohnson
Interview CDs: http://mp3.com/RColinJohnson
Story in EE Times: