"CHIPS: IBM fabs graphene FETs"

Graphene field-effect transistors (FETs) using a single layer of carbon atoms atop a silicon wafer have been successfully fabricated at IBM's T.J. Watson Research Center (Yorktown Heights, N.Y.). Although the technique is a decade away from widespread commercialization, IBM is currently working on radio frequency (RF) applications of the technology for discrete devices planned by the Defense Advanced Research Projects Agency (Darpa)
Text: http://www.eetimes.com/showArticle.jhtml?articleID=202103726