Here is what EETimes says about laser-spike annealing: A new type of annealing developed by researchers at Cornell University promises the potential to shorten processing time and improve image quality of semiconductor lithography.
Laser-spike annealing (LSA), developed by Cornell researchers backed by Semiconductor Research Corp. (Research Triangle, N.C.) , has already been tested for both 193-nanometer immersion lithography and 13-nm extreme ultra violet (EUV). The technique is currently being considered for adoption by SRC members, including IBM Corp., Texas Instruments Inc., Intel Corp., Advanced Micro Devices Inc., Freescale semiconductor Inc. and Globalfoundries Inc.
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