Everybody knows that silicon is running out of gas and most of us think that carbon is the solution to next generation chips, but now there is a new contendor that may beat both silicon and graphene. Look of molybdenite to be developed by multiple labs over the next seven years. R. Colin Johnson @NextGenLog
Molybdenite--MoS2--here is used to create an ultra-lower power field effect transistors (FET) by acting as its channel on a silicon-on-insulator substrate using high-k dielectric (HfO2) gate oxide.
Here is what my EETimes story says about molybdenite: A new semiconductor material called molybdenite (MoS2) is claimed to be 100,000 times lower power than silicon, plus will allow the fabrication of much smaller transistors, according to researchers at Switzerland's Ecole Polytechnique Federale de Lausanne (EPGL). As a next-generation semiconductor material, molybdenite also beats graphene by possessing a bandgap, according the EPGL...
Full Text: http://bit.ly/NextGenLog-i4OG