
Molybdenite--MoS2--here is used to create an ultra-lower power field effect transistors (FET) by acting as its channel on a silicon-on-insulator substrate using high-k dielectric (HfO2) gate oxide.
Here is what my EETimes story says about molybdenite: A new semiconductor material called molybdenite (MoS2) is claimed to be 100,000 times lower power than silicon, plus will allow the fabrication of much smaller transistors, according to researchers at Switzerland's Ecole Polytechnique Federale de Lausanne (EPGL). As a next-generation semiconductor material, molybdenite also beats graphene by possessing a bandgap, according the EPGL...
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