By flanking a galliun nitride (GaN) device termination with ion implantation (green) researchers boosted GaN breakdown voltage from 300 to 1,650 volts.
Here is what my EETimes story says about GaN: Gallium nitride is lauded as the next-generation material for high-power electronics, but until now has been plagued by breakdown above about 250 volts, according to researchers at North Carolina State University. The researchers claim to have discovered a technique to raise breakdown to 1,650 volts, thereby boosting power handling by 10 times. These high-power handling GaN devices will be useful for emerging applications ranging from smart-grid to electric cars...
Full Text: http://bit.ly/NextGenLog-eZ7o
