
A new process for gallium nitride (GaN) films removes efficiency robbing defects--dark streaks (a)--by trapping them in voids--elipsoids (b).
Here is what my EETimes story said about brighter LEDS: A new gallium nitride (GaN) process purifies that high-energy material by eliminating up to 1,000 times as many defects as are typically present, according to its inventors at North Carolina State University. The NCSU researchers predict that light-emitting diodes (LEDs), power transistors and other devices cast in GaN will be able to double their outputs by switching to the new process...
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