Carbon semiconductors using sheets of pure graphene are being proposed at Brown University, which recently proposed a method for removing defects from graphene semiconductors. Look for the switch from silicon to carbon semiconductors over the next 20 years. R.C.J.
Professor Vivek Shenoy (right) and graduate student Akbar Bagri (left) are exploring how to perfect the atomic configuration of graphene oxides, proposing that oxygen defects in graphene sheets be located and treated with hydrogen, which combines to form water vapor which leaves the lattice healed. The usual method of removing defects in silicon semiconductors is annealing--slow heating--but Brown demonstrated simulations showing that their hydrogen treatment works better for graphene.
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