Thursday, July 01, 2010

#Freescale hits #GaAs on RF basestation ICs

Gallium arsenide (GaAs) offers the ultra-low noise needed for amplifiers in RF basestations making Freescale's entry into the market a welcome analog addition to its already deep penetration in digital components. Look for Freescale to increase its market share in basestation, repeaters, femtocells and other emerging RF markets. R.C.J.

Freescale Semiconductor is branching out into integrated gallium arsenide devices for RF basestations, building on its business in lateral-diffusion MOS discrete power transistors for basestation apps. The ultralow-noise GaAs chips promise enable pre-amplification of radio signals without also magnifying noise. The first members of Freescale's GaAs monolithic microwave IC family are low-noise amplifiers and power amplifiers (PAs) for wireless basestations, repeaters and femtocells...The four GaAs parts are the first in what Freescale promises will be a growing family based on its patented indium gallium phosphide (InGaP) heterojunction biploar transistors, heterojunction FETs and enhancement-mode pseudomorphic high-electron-mobility transistors (pHEMTs). Designed for both general-purpose and low-noise power amplification, the devices target 3G and 4G basestation applications...Freescale has also extended its LDMOS power FET family with ultra-rugged 50-volt models...designed for conventional applications in carbon dioxide lasers, magnetic resonance imaging and plasma generators for semiconductors and solar cell coatings, but their higher-voltage operation has also won them applications in FM broadcast transmitters, mobile radios, radar, solid-state synchrotrons and RF-illumination lighting (used, for example, in streetlamps and stadium lighting systems...
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