Freescale Semiconductor is branching out into integrated gallium arsenide devices for RF basestations, building on its business in lateral-diffusion MOS discrete power transistors for basestation apps. The ultralow-noise GaAs chips promise enable pre-amplification of radio signals without also magnifying noise. The first members of Freescale's GaAs monolithic microwave IC family are low-noise amplifiers and power amplifiers (PAs) for wireless basestations, repeaters and femtocells...The four GaAs parts are the first in what Freescale promises will be a growing family based on its patented indium gallium phosphide (InGaP) heterojunction biploar transistors, heterojunction FETs and enhancement-mode pseudomorphic high-electron-mobility transistors (pHEMTs). Designed for both general-purpose and low-noise power amplification, the devices target 3G and 4G basestation applications...Freescale has also extended its LDMOS power FET family with ultra-rugged 50-volt models...designed for conventional applications in carbon dioxide lasers, magnetic resonance imaging and plasma generators for semiconductors and solar cell coatings, but their higher-voltage operation has also won them applications in FM broadcast transmitters, mobile radios, radar, solid-state synchrotrons and RF-illumination lighting (used, for example, in streetlamps and stadium lighting systems...
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